第五章:IC制造工艺 mermaid graph TD A[高纯多晶硅] --> B[熔融拉晶] B --> C[单晶硅锭] C --> D[切片抛光] D --> E[洁净晶圆] E --> F[高温氧化炉] F --> G[二氧化硅薄膜] G --> H[表面钝化与掩模基底] mermaid graph LR A[设计版图] --> B[掩模版制作] B --> C[涂胶与前烘] C --> D[曝光成像] D --> E[显影定影] E --> F[图形转移] F --> G[干法/湿法蚀刻] G --> H[去胶清洗] mermaid graph BT A[前道工艺完成] --> B[介质沉积] B --> C[通孔刻蚀] C --> D[阻挡层沉积] D --> E[铜电镀填充]